#2MBI200U4H-120 Fuji 2MBI200U4H-120 New 2MBI200U4H-120-50 IGBT Array & Module Transistor N Channel 200 A 2.05 V 1.04 kW 1.2 kV Module, 2MBI200U4H-120 pictures, 2MBI200U4H-120 price, #2MBI200U4H-120 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Transistor Polarity: N Channel
DC Collector Current: 200A
Collector Emitter Saturation Voltage Vce(on): 2.05V
Power Dissipation Pd: 1.04kW
Collector Emitter Voltage V(br)ceo: 1.2kV
Transistor Case Style: Module
No. of Pins: 7Pins
Operating Temperature Max: 150°C
Product Range: –
Transistor Type: IGBT Module
MSL: -SVHC: To Be Advised
2MBI200U4H-120-50 IGBT Array & Module Transistor N Channel 200 A 2.05 V 1.04 kW 1.2 kV Module
DC Collector Current: 200A
Collector Emitter Saturation Voltage Vce(on): 2.05V
Power Dissipation Pd: 1.04kW
Collector Emitter Voltage V(br)ceo: 1.2kV
Transistor Case Style: Module
No. of Pins: 7Pins
Operating Temperature Max: 150°C
Product Range: –
Transistor Type: IGBT Module
MSL: -SVHC: To Be Advised
2MBI200U4H-120-50 IGBT Array & Module Transistor N Channel 200 A 2.05 V 1.04 kW 1.2 kV Module